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Document Details
Document Type
:
Article In Journal
Document Title
:
I-V Characteristics of III-V Compounds (GAAS) for MOSFET Devices
MOSFET لمادة الجاليومارسنيد المستخدم لوصلت الـ( III-V )علاقة التيار بالجهد للمركبات
Subject
:
Physics
Document Language
:
English
Abstract
:
A new approach of examining and characterizing both thin film or thin film based devices are described in this paper. Justification of the selected techniques which have been utilized in fabricating these thin films are given. The important aspect of selecting the substrates on which the thin films are made were pointed out. The measurement techniques which have been adopted here are discussed. Results and discussion show the ability, reliability and simplicity of these proposed techniques. The results are interesting and confirm the method used to produce them, even though it is an oil pumped system.
ISSN
:
1012-1319
Journal Name
:
Science Journal
Volume
:
10
Issue Number
:
1
Publishing Year
:
1418 AH
1998 AD
Number Of Pages
:
10
Article Type
:
Article
Added Date
:
Sunday, October 11, 2009
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
سعيد سعد الامير
S. S. AL-AMEER
Researcher
فهد مسعود المرزوقي
F. ALMARZOUKI
Researcher
Files
File Name
Type
Description
22561.pdf
pdf
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