Main Page
About Science
Faculty Deanship
Letter of Dean
Overview of Deanship
Vice Deans
Vice Dean
Letter of Vice-dean
Overview of Vice-deanship
Vice Dean for Graduate Studies
Letter of Vice Dean for Graduate Studies
Overview of Vice Dean of Postgraduate Studies
Research and Innovation Unit
Vice Dean for Girls Campus
Faculty Management
Letter of Managing Director-Boys Campus
Letter of Managing Director-Girls Campus
Overview of Management
Educational Affairs
Males Campus
Staff
Females Campus
Contact Us
Research
عربي
English
About
Admission
Academic
Research and Innovations
University Life
E-Services
Search
Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Optical analysis of Ge/MgO and Ge/BN thin layers designed for terahertz applications
Optical analysis of Ge/MgO and Ge/BN thin layers designed for terahertz applications
Subject
:
physics
Document Language
:
English
Abstract
:
In this work, a 200 nm Ge thin film is used as a substrate to design Ge/MgO and Ge/BN layers. The optical dynamics in these devices are investigated by means of the reflectivity and the transmissivity measurements. Particularly, the details of the dielectric spectra and the values of the energy band gaps (E-g) are investigated. Below 350 THz, the construction of Ge/MgO and Ge/BN interfaces decreased the effective dielectric constant of Ge by 39% and by 76%, respectively. It also increased the quality factor of the Ge optical device from 150 to 1400 and to 940 at 300 THz. All the dispersive optical parameters are also evaluated. In addition, the direct/indirect E-g value of Ge which was determined as 1.15/0.72 eV is observed to shift down by a 0.13/0.42 and by a 023/0.54 eV for the Ge/MgO and Ge/BN devices, respectively. The sharp increase in the dielectric constant with decreasing frequency in the range of 353 273 THz, the dispersive optical parameters and the energy band gap attenuations of the optical structures are promising as they indicate the applicability of the Ge, Ge/MgO and Gel BN layers in terahertz sensing. The latter technology has a wide range of applications like medical and telecommunication devices
ISSN
:
1369-8001
Journal Name
:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume
:
31
Issue Number
:
1
Publishing Year
:
1435 AH
2015 AD
Article Type
:
Article
Added Date
:
Monday, August 21, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
S.E AlGarni
AlGarni, S.E
Investigator
Doctorate
A.F Qasrawi
Qasrawi, A.F
Researcher
Doctorate
atef.qasrawi@atilim.edu.tr
Files
File Name
Type
Description
42722.pdf
pdf
Back To Researches Page